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- Package / Case :
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- Pd - Power Dissipation :
- Vgs - Gate-Source Breakdown Voltage :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
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GET PRICE |
1,176
In-stock
|
Central Semiconductor | JFET Leaded JFET | Through Hole | TO-18 | + 200 C | 2N4857 | Bulk | 360 mW | Single | N-Channel | 40 V | 40 Ohms | 40 V | 20 mA to 100 mA | ||||
|
GET PRICE |
300
In-stock
|
InterFET | JFET JFET N-Channel -30V 1.8W 10mW 50mA | Through Hole | TO-18-3 | 2N485 | Bulk | 1.8 W | Single | N-Channel | 15 V | 500 pA | 40 Ohms | - 40 V | 100 mA | ||||
|
GET PRICE |
10
In-stock
|
InterFET | JFET JFET N-Channel -30V 1.8W 10mW 50mA | Through Hole | TO-18-3 | 2N486 | Bulk | 1.8 W | Single | N-Channel | 15 V | 500 pA | 40 Ohms | - 30 V | 100 mA | ||||
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VIEW | Central Semiconductor | JFET Leaded JFET | Through Hole | TO-18 | + 200 C | 2N4860 | Single | N-Channel | 40 Ohms | 30 V | 20 mA to 100 mA |