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44 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Memory Size | Maximum Clock Frequency | Supply Voltage - Max | Supply Voltage - Min | Interface Type | Organization | Access Time | Supply Current - Max | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
65
In-stock
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GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | ||
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|
GET PRICE |
36
In-stock
|
GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 7.5 ns | 200 mA, 210 mA | ||
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|
|
GET PRICE |
36
In-stock
|
GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | ||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 36 32M | SMD/SMT | BGA-119 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 36 32M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 36 36M | SMD/SMT | BGA-119 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 36 36M | SMD/SMT | BGA-119 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 36 36M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 36 36M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 32 32M | SMD/SMT | TQFP-100 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 32 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 32 32M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 32 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 36 36M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 1.8/2.5V 1M x 36 36M | SMD/SMT | BGA-165 | 0 C | + 70 C | Tray | 36 Mbit | 150 MHz | 2.7 V | 1.7 V | Parallel | 1 M x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-119 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | TQFP-100 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 36 18M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 36 | 7.5 ns | 200 mA, 210 mA | |||
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VIEW | GSI Technology | SRAM 2.5 or 3.3V 512K x 32 16M | SMD/SMT | BGA-165 | - 40 C | + 85 C | Tray | 18 Mbit | 150 MHz | 3.6 V | 2.3 V | Parallel | 512 k x 32 | 7.5 ns | 200 mA, 210 mA |
